Characterization bringsthe text fully up-to-date with the latest developments in the fieldand includes new pedagogical tools to assist readers. Not only doesthe Third Edition set forth all the latest measurementtechniques, but it also examines new interpretations and newapplications of existing techniques.Semiconductor Material and Device Characterizationremains the sole text dedicated to characterization techniques formeasuring semiconductor materials and devices. Coverage includesthe full range of electrical and optical characterization methods,including the more specialized chemical and physical techniques.Readers familiar with the previous two editions will discover athoroughly revised and updated Third Edition, including:Updated and revised figures and examples reflecting the mostcurrent data and information260 new references offering access to the latest research anddiscussions in specialized topicsNew problems and review questions at the end of each chapter totest readers' understanding of the materialIn addition, readers will find fully updated and revisedsections in each chapter.Plus, two new chapters have been added:Charge-Based and Probe Characterization introduces charge-basedmeasurement and Kelvin probes. This chapter also examinesprobe-based measurements, including scanning capacitance, scanningKelvin force, scanning spreading resistance, and ballistic electronemission microscopy.Reliability and Failure Analysis examines failure times anddistribution functions, and discusses electromigration, hotcarriers, gate oxide integrity, negative bias temperatureinstability, stress-induced leakage current, and electrostaticdischarge.Written by an internationally recognized authority in the field,Semiconductor Material and Device Characterization remainsessential reading for graduate students as well as forprofessionals working in the field of semiconductor devices andmaterials.An Instructor's Manual presenting detailed solutions to all theproblems in the book is available from the Wiley editorialdepartment.

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